View IRF7380QPBF_4123728.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 96132
IRF7380QPBF
l l l l l l l l
Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150C Operating Temperature Automotive [Q101] Qualified Lead-Free
HEXFET(R) Power MOSFET
VDSS 80V
RDS(on) max 73m:@VGS = 10V
ID 2.2A
S1 G1 S2 G2
1 2 3 4
8 7 6 5
D1 D1 D2 D2
Description
Specifically designed for Automotive applications. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 100C IDM PD @TA = 25C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
80 20 3.6h 2.9 29 2.0 0.02 2.3 -55 to + 150
Units
V
c
A W W/C V/ns C
Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and
e
Storage Temperature Range
Thermal Resistance
Parameter
RJL RJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) *
Typ.
--- ---
Max.
20 50
Units
C/W
Notes through are on page 8
www.irf.com
1
09/14/07
IRF7380QPBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
80 --- --- 2.0 --- --- --- --- --- 0.09 61 --- --- --- --- --- --- --- 73 4.0 20 250 200 -200 nA V
Conditions
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 2.2A
f
V A
VDS = VGS, ID = 250A VDS = 80V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V
Dynamic @ TJ = 25C (unless otherwise specified)
Parameter
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
4.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- 15 2.9 4.5 9.0 10 41 17 660 110 15 710 72 140 --- 23 --- --- --- --- --- --- --- --- --- --- --- --- pF ns nC S ID = 2.2A VDS = 40V VGS = 10V VDD = 40V ID = 2.2A RG = 24 VGS = 10V VGS = 0V VDS = 25V
Conditions
VDS = 25V, ID = 2.2A
f f
= 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 64V, = 1.0MHz VGS = 0V, VDS = 0V to 64V
g
Avalanche Characteristics
EAS IAR Parameter Single Pulse Avalanche Energydh Avalanche CurrentA Typ. --- --- Max. 75 2.2 Units mJ A
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ah Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 50 110 3.6 29 1.3 --- --- A A V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 2.2A, VGS = 0V TJ = 25C, IF = 2.2A, VDD = 40V di/dt = 100A/s
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRF7380QPBF
100
TOP VGS 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V 3.7V
100
TOP VGS 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V 3.7V
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
1
BOTTOM
BOTTOM
0.1
3.7V
1
3.7V
0.01
20s PULSE WIDTH Tj = 25C
0.001 0.1 1 10 100 1000 0.1 0.1 1
20s PULSE WIDTH Tj = 150C
10 100 1000
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
I D = 3.6A
RDS(on), Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current ()
2.0
10
T J = 150C
1.5
1
T J = 25C
1.0
VDS = 15V 20s PULSE WIDTH
0 3.0 4.0 5.0 6.0 7.0
0.5
0.0 -60 -40 -20 0 20 40 60 80 100
V GS = 10V
120 140 160
VGS , Gate-to-Source Voltage (V)
TJ, Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRF7380QPBF
100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C SHORTED gs ds Crss = C gd Coss = Cds + Cgd
12 10 8 6 4 2 0
ID= 2.1A
10000
VGS , Gate-to-Source Voltage (V)
VDS= 64V VDS= 40V VDS= 16V
C, Capacitance(pF)
1000
Ciss C oss Crss
100
10
1 1 10 100
0
2
4
6
8
10
12
14
16
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100 OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
10
10 100sec 1 Tc = 25C Tj = 150C Single Pulse 1 10
T J= 25 C TJ = 150 C
1
1msec 10msec
0.1 0.0 0.5 1.0
V GS = 0 V
1.5 2.0
0.1
VSD, Source-to-Drain Voltage (V)
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRF7380QPBF
4.0
VDS VGS
3.0
RD
RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
ID , Drain Current (A)
-V DD
2.0
1.0
Fig 10a. Switching Time Test Circuit
VDS 90%
0.0 25 50 75 100 125 150
TA , Ambient Temperature (C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Ambient Temperature
Fig 10b. Switching Time Waveforms
100
(Z thJA )
D = 0.50
0.20 10 0.10
Thermal Response
0.05
0.02 1 0.01
P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +T A 10 100
J = P DM x Z thJA
0.1 0.00001
0.0001
0.001
0.01
0.1
1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRF7380QPBF
RDS (on) , Drain-to-Source On Resistance (m)
95 90 85 80 75 70 65 60 55 50 0 5 10 15 20 25 30 ID , Drain Current (A) VGS = 10V
RDS(on) , Drain-to -Source On Resistance (m )
800 700 600 500 400 300 200 100 0 3.0 5.0 7.0 9.0 11.0 13.0 15.0
ID = 3.6A
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
VG
200
VGS
3mA
EAS, Single Pulse Avalanche Energy (mJ)
TOP
160
Charge
IG ID
BOTTOM
ID 1.0A 1.8A 2.2A
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
120
80
15V
V(BR)DSS tp
VDS L
40
DRIVER
RG
20V
D.U.T
IAS
+ V - DD
A
0 25 50 75 100 125 150
I AS
tp
0.01
Starting TJ, Junction Temperature (C)
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy Vs. Drain Current
6
www.irf.com
IRF7380QPBF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
9 6 ' & ! % " $ 7
9DH 6 6 i p DI8C@T HDI H6Y $"! %'' # (' " &$ '( #(& ! (' (%' $&# HDGGDH@U@ST HDI H6Y "$ &$ !$ "" ( #' "' $ !$ $ #
% @
$ #
C !$Ab dA
6
9 @ r r C F G
$AA76TD8 !$AA76TD8 !!'# !## (( % A (% $ A'
!&AA76TD8 %"$AA76TD8 $' %! !$ # A $ !& A'
%Y r
r
6
FAA#$ 8 Ab#dA 'YAG & 'YAp
'YAi !$Ab dA
6 867
IPU@T) AA9DH@ITDPIDIBAEAUPG@S6I8DIBAQ@SA6TH@A #$H ((# !AA8PIUSPGGDIBA9DH@ITDPI)AHDGGDH@U@S "AA9DH@ITDPITA6S@ATCPXIADIAHDGGDH@U@STAbDI8C@Td #AAPVUGDI@A8PIAPSHTAUPAE@9@8APVUGDI@AHT !66 $AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A $Ab%d %AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A!$Ab d &AAA9DH@ITDPIADTAUC@AG@IBUCAPAAG@69AAPSATPG9@SDIBAUP AAAAA6ATV7TUS6U@
APPUQSDIU 'YA&!Ab!'d
%#%Ab!$$d
"YA !&Ab$d
'YA &'Ab&d
SO-8 Part Marking
@Y6HQG@)AUCDTADTA6IADSA& AHPTA@U
DIU@SI6UDPI6G S@8UDAD@S GPBP
;;;; )
96U@A8P9@AXX QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S
7
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
IRF7380QPBF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. Starting TJ = 25C, L = 31mH RG = 25, IAS = 2.2A. Pulse width 400s; duty cycle 2%.
When mounted on 1 inch square copper board. Coss eff. is a fixed capacitance that gives the same charging time as ISD 2.2A, di/dt 220A/s, VDD V(BR)DSS,TJ 150C.
Coss while VDS is rising from 0 to 80% VDSS.
Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2007
8
www.irf.com

▲Up To Search▲

Price & Availability of IRF7380QPBF

	To Download IRF7380QPBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .